MMBTH11

This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 A to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47.

Symbol	Parameter	Value	Units
VCEO	CollectorEmitter Voltage	25	V
VCEO	CollectorBase Voltage	30	V
VCEO	EmitterBase Voltage	3.0	V
IC	Collector current - Continuous	50	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 ~ +150

*These ratings are limiting values above which the serviceability of any semiconductor device
may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
    or low duty cycle operations.